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W631GU8MB11I

Winbond Electronics

IC SDRAM 1GBIT 933MHZ 78BGA. DRAM 1G DDR3L 1.35V SDRAM, x8, 933MHz, Industrial Temp

35517PC 주식

W631GG6MB11I

Winbond Electronics

IC SDRAM 1GBIT 933MHZ 96WBGA. DRAM 1G DDR3 SDRAM, x16, Industrial Temp. 933MHz

35517PC 주식

W631GU6MB12I

Winbond Electronics

IC SDRAM 1GBIT 800MHZ 96BGA. DRAM 1G DDR3L 1.35V SDRAM, x16, Industrial Temp. 800MHz

35517PC 주식

W631GU6MB15I

Winbond Electronics

IC SDRAM 1GBIT 667MHZ 96BGA. DRAM 1G DDR3L 1.35V SDRAM, x16, Industrial Temp. 667MHz

35517PC 주식

W631GU8MB15I

Winbond Electronics

IC SDRAM 1GBIT 667MHZ 78BGA. DRAM 1G DDR3L 1.35V SDRAM, x8, 667MHz, Industrial Temp

35517PC 주식

W631GU8MB12I

Winbond Electronics

IC SDRAM 1GBIT 800MHZ 78BGA. DRAM 1G DDR3L 1.35V SDRAM, x8, 800MHz, Industrial Temp

35517PC 주식

W631GG8MB15I

Winbond Electronics

IC SDRAM 1GBIT 667MHZ 78BGA. DRAM 1G DDR3 SDRAM, x8, 667MHz, Industrial Temp

35517PC 주식

W971GG8SB25I

W971GG8SB25I

Winbond Electronics

IC DRAM 1G PARALLEL 60WBGA. DRAM 1G, DDR2-800, x8. Ind temp

35649PC 주식

W25Q256JVFIM

W25Q256JVFIM

Winbond Electronics

IC FLASH 256M SPI 133MHZ 16SOIC. NOR Flash spiFlash, 3V, 256M-bit, 4Kb Uniform Sector, DTR

36139PC 주식

W25Q257JVFIQ

W25Q257JVFIQ

Winbond Electronics

IC FLASH 256MBIT 16SOIC.

36139PC 주식

W25Q256JVFIQ

W25Q256JVFIQ

Winbond Electronics

IC FLASH 256M SPI 133MHZ 16SOIC. NOR Flash spiFlash, 3V, 256M-bit, 4Kb Uniform Sector

36139PC 주식

W9825G6JB-6 TR

W9825G6JB-6 TR

Winbond Electronics

IC DRAM 256M PARALLEL 54TFBGA. DRAM 256M SDR SDRAM x16, 166MHz, T&R

36339PC 주식

W25Q256JVCIQ

W25Q256JVCIQ

Winbond Electronics

IC FLASH 256M SPI 24TFBGA. NOR Flash spiFlash, 3V, 256M-bit, 4Kb Uniform Sector

36508PC 주식

W25Q256JVBIM

W25Q256JVBIM

Winbond Electronics

IC FLASH 256M SPI 24TFBGA. NOR Flash spiFlash, 3V, 256M-bit, 4Kb Uniform Sector, DTR

36508PC 주식

W25Q256JVCIM

W25Q256JVCIM

Winbond Electronics

IC FLASH 256M SPI 24TFBGA.

36508PC 주식

W949D2DBJX5I TR

W949D2DBJX5I TR

Winbond Electronics

IC DRAM 512M PARALLEL 90VFBGA. DRAM 512M mDDR, x32, 200MHz, Industrial Temp, 46nm T&R

36941PC 주식

W949D2DBJX5E TR

W949D2DBJX5E TR

Winbond Electronics

IC DRAM 512M PARALLEL 90VFBGA. DRAM 512M mDDR, x32, 200MHz T&R

36941PC 주식

W989D2DBJX6I TR

W989D2DBJX6I TR

Winbond Electronics

IC DRAM 512M PARALLEL 90VFBGA. DRAM 512M mSDR, x32, 166MHz, Ind Temp, 46nm T&R

36941PC 주식

W949D6DBHX5I TR

W949D6DBHX5I TR

Winbond Electronics

IC DRAM 512M PARALLEL 60VFBGA. DRAM 512M mDDR, x16, 200MHz, Industrial Temp, 46nm T&R

37564PC 주식

W989D6DBGX6I TR

W989D6DBGX6I TR

Winbond Electronics

IC DRAM 512M PARALLEL 54VFBGA. DRAM 512M mSDR, x16, 166MHz, Ind Temp, 46nm

37564PC 주식