Qorvo QPA3069 100W GaN Power Amplifier
Qorvo QPA3069 100W GaN Power Amplifier is a packaged, high-power S-band amplifier ideal for military radar systems. The amplifier covers from 2.7GHz to 3.5GHz and is fabricated on Qorvo’s production 0.25um gallium nitride (GaN) with Silicon Carbide (SiC) processing (QGaN25). QPA3069 provides 50dBm of saturated output power and 25dB of large-signal gain while achieving 53% power-added efficiency. QPA3069 is packaged in a 7mm x7 mm 48-pin plastic overmolded package. QPA3069 MMIC has DC blocking capacitors on both RF ports, which are matched to 50Ω.
Features
2.7GHz to 3.5GHz frequency range7mm x 7mm x 0.85mm package dimensions2x channels117W power dissipation
Specifications
PSAT (PIN=25dBm): > 50dBmPAE (PIN=25dBm): > 53%
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Date: 2019-09-04Qorvo QPA3069EVB Evaluation Board develops the QPA3069 100W GaN Power Amplifier.
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Date: 2019-08-28Qorvo QPA2210DEVB01 and QPA2211DEVB03 Development Board evaluate QPA2210D and QPA2211D GaN Ka-Band Power Amplifiers.
Date: 2019-08-28Qorvo QPA1022 11GHz 4W Gallium Nitride (GaN) Power Amplifier supports tight lattice spacing requirements for phased array radar applications.
Date: 2019-08-28