United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
Date: 2018-10-29United Silicon Carbide UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V.
Date: 2018-10-29UnitedSiC SiC FETs are UJ3C and UF3C series of silicon carbide FETs that are based on a unique cascode configuration. Now Available at Mouser.
Date: 2018-08-13UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of SiC superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).
Date: 2018-04-26