Wolfspeed / Cree CGHV40200PP GaN HEMT
Wolfspeed/Cree CGHV40200PP GaN HEMT operates from a 50V rail and offers a broadband solution to RF and microwave applications. The Gan High Electron Mobility Transistors provide high efficiency, high gain, and wide bandwidth capabilities. These features make CGHV40200PP ideal for linear and compressed amplifier circuits. CGHV40200PP GaN HEMT is available in 4-lead flange package. Typical applications include 2-way radio, broadband amplifiers, radar amplifiers, and test instrumentation.
Features
Up to 2.7GHz operation21dB small signal gain at 1.8GHz
Specifications
200W Power output125V drain-source voltage at 25ºC
Applications
2-way private radioBroadband amplifiersRadar amplifiersTest instrumentationClass A, AB, and linear amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms
Wolfspeed Newest
Wolfspeed E-Series AEC-Q101 Silicon Carbide Diodes are robust SiC semiconductor devices that are automotive qualified for Electric Vehicles (EV) and renewable energy markets.
Date: 2019-09-17Wolfspeed C3M0032120K Silicon Carbide Power MOSFETs are designed using C3M™ MOSFET Technology.
Date: 2019-08-09Wolfspeed CGD12HBXMP Dual Channel Differential Isolated Gate Driver evaluates the two-channel gate driver for the XM3 SiC half-bridge power modules.
Date: 2019-07-12Wolfspeed CGD12HB00D Differential Transceiver Companion Tool evaluates the two-channel gate driver for the XM3 SiC half bridge power modules.
Date: 2019-07-12Wolfspeed CAB450M12XM3 1200V 450A All-Silicon Carbide Half-Bridge Module maximizes power density while minimizing loop inductance and enabling simple power bussing.
Date: 2019-07-12Wolfspeed C3M0016120K Silicon Carbide Power MOSFET facilitates C3M™ MOSFET Technology in an optimized package.
Date: 2019-06-10Wolfspeed 6th Generation 650V C6D SiC Schottky Diodes demonstrate technological innovation and achieve highest system level efficiency in a PFC boost converter.
Date: 2019-05-29Wolfspeed / Cree CMPA5259050F MMICs are gallium nitride (GaN) High Electron Mobility Transistors (HEMT) based on monolithic microwave integrated circuit (MMIC) for radar power amplifiers.
Date: 2019-05-17