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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. 집
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  5. K4A4G165WE-BCWE

Samsung Semiconductor - K4A4G165WE-BCWE

KEY Part #: K7359583

[14339PC 주식]

    부품 번호:
    K4A4G165WE-BCWE
    제조사:
    Samsung Semiconductor
    상세 설명:
    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. LPDDR4, DDR4, LPDDR4X, DDR3, HBM Flarebolt, HBM Aquabolt, LPDDR3 and GDDR6 ...
    경쟁 우위:
    We specialize in Samsung Semiconductor K4A4G165WE-BCWE electronic components. K4A4G165WE-BCWE can be shipped within 24 hours after order. If you have any demands for K4A4G165WE-BCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G165WE-BCWE 제품 속성

    부품 번호 : K4A4G165WE-BCWE
    제조사 : Samsung Semiconductor
    기술 : 4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    시리즈 : DDR4
    밀도 : 4 Gb
    조직. : 256M x 16
    속도 : 3200 Mbps
    전압 : 1.2 V
    온도. : 0 ~ 85 °C
    꾸러미 : 96FBGA
    제품 상태 : Mass Production

    최근 소식

    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Speed for the next generation of mobile devices
    Samsung Z-SSD SZ985
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    당신은 또한 관심이있을 수 있습니다
    • K4A4G085WE-BIRC

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      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

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      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

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