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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. 집
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  5. K4B2G1646F-BYMA

Samsung Semiconductor - K4B2G1646F-BYMA

KEY Part #: K7359665

[24906PC 주식]

    부품 번호:
    K4B2G1646F-BYMA
    제조사:
    Samsung Semiconductor
    상세 설명:
    2 Gb 128M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. HBM Flarebolt, LPDDR3, HBM Aquabolt, DDR4, MODULE, DDR3, LPDDR4X and LPDDR5 ...
    경쟁 우위:
    We specialize in Samsung Semiconductor K4B2G1646F-BYMA electronic components. K4B2G1646F-BYMA can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BYMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BYMA 제품 속성

    부품 번호 : K4B2G1646F-BYMA
    제조사 : Samsung Semiconductor
    기술 : 2 Gb 128M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    시리즈 : DDR3
    밀도 : 2 Gb
    조직. : 128M x 16
    속도 : 1866 Mbps
    전압 : 1.35 V
    온도. : 0 ~ 85 °C
    꾸러미 : 96FBGA
    제품 상태 : Mass Production

    최근 소식

    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Mass Production of Fifth-Generation V-NAND has Started
    Bringing Artificial Intelligence to Devices Everywhere
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
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