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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. 집
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  5. K4B2G1646F-BYK0

Samsung Semiconductor - K4B2G1646F-BYK0

KEY Part #: K7359664

[26091PC 주식]

    부품 번호:
    K4B2G1646F-BYK0
    제조사:
    Samsung Semiconductor
    상세 설명:
    2 Gb 128M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. LPDDR5, LPDDR4, HBM Flarebolt, HBM Aquabolt, SLC Nand, LPDDR3, MODULE and DDR3 ...
    경쟁 우위:
    We specialize in Samsung Semiconductor K4B2G1646F-BYK0 electronic components. K4B2G1646F-BYK0 can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BYK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BYK0 제품 속성

    부품 번호 : K4B2G1646F-BYK0
    제조사 : Samsung Semiconductor
    기술 : 2 Gb 128M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    시리즈 : DDR3
    밀도 : 2 Gb
    조직. : 128M x 16
    속도 : 1600 Mbps
    전압 : 1.35 V
    온도. : 0 ~ 85 °C
    꾸러미 : 96FBGA
    제품 상태 : Mass Production

    최근 소식

    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Mission Peak Reference Server System for NGSFF SSD
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Unlocking the Power of Cloud Computing
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Autonomous Driving and the Quest for Safety
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    How Will 5G Impact on Memory?
    Bringing Artificial Intelligence to Devices Everywhere
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
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