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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. 집
  2. 제품
  3. DRAM
  4. MODULE
  5. M393A4K40CB2-CTD

Samsung Semiconductor - M393A4K40CB2-CTD

KEY Part #: K7359896

[25177PC 주식]

    부품 번호:
    M393A4K40CB2-CTD
    제조사:
    Samsung Semiconductor
    상세 설명:
    DDR4 RDIMM 32 GB 2R x 4 2666 Mbps 1.2 V 288 (2G x 4) x 36 Mass Production.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. DDR3, LPDDR4X, LPDDR5, DDR4, SLC Nand, GDDR5, LPDDR3 and MODULE ...
    경쟁 우위:
    We specialize in Samsung Semiconductor M393A4K40CB2-CTD electronic components. M393A4K40CB2-CTD can be shipped within 24 hours after order. If you have any demands for M393A4K40CB2-CTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M393A4K40CB2-CTD 제품 속성

    부품 번호 : M393A4K40CB2-CTD
    제조사 : Samsung Semiconductor
    기술 : DDR4 RDIMM 32 GB 2R x 4 2666 Mbps 1.2 V 288 (2G x 4) x 36 Mass Production
    시리즈 : DDR3
    DDR : DDR4
    DIMM 유형 : RDIMM
    밀도 : 32 GB
    순위는 조직을 X. : 2R x 4
    속도 : 2666 Mbps
    전압 : 1.2 V
    핀의 번호 : 288
    구성 요소 구성 : (2G x 4) x 36
    제품 상태 : Mass Production

    최근 소식

    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Automotive Driven by Small Packages Under the Hood
    Autonomous Driving and the Quest for Safety
    Speed for the next generation of mobile devices
    5G and Memory - from Connected Thinking to Connected Living
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
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