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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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Samsung Semiconductor - M391A2K43BB1-CPB

KEY Part #: K7359836

[18725PC 주식]

    부품 번호:
    M391A2K43BB1-CPB
    제조사:
    Samsung Semiconductor
    상세 설명:
    DDR4 ECC UDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 Mass Production.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. DDR3, GDDR6, LPDDR3, HBM Aquabolt, LPDDR4, LPDDR5, LPDDR4X and SLC Nand ...
    경쟁 우위:
    We specialize in Samsung Semiconductor M391A2K43BB1-CPB electronic components. M391A2K43BB1-CPB can be shipped within 24 hours after order. If you have any demands for M391A2K43BB1-CPB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M391A2K43BB1-CPB 제품 속성

    부품 번호 : M391A2K43BB1-CPB
    제조사 : Samsung Semiconductor
    기술 : DDR4 ECC UDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 Mass Production
    시리즈 : DDR3
    DDR : DDR4
    DIMM 유형 : ECC UDIMM
    밀도 : 16 GB
    순위는 조직을 X. : 2R x 8
    속도 : 2133 Mbps
    전압 : 1.2 V
    핀의 번호 : 288
    구성 요소 구성 : (1G x 8) x 18
    제품 상태 : Mass Production

    최근 소식

    SSDs, DRAM and gaming: Unlocking a new level of performance
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Memory Solutions for Automotive
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    The Ultra-Low Latency SSD, Z-SSD
    Autonomous Driving and the Quest for Safety
    How Will 5G Impact on Memory?
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    당신은 또한 관심이있을 수 있습니다
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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