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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. KLMDG4UCTA-B041

Samsung Semiconductor - KLMDG4UCTA-B041

KEY Part #: K7360057

[25983PC 주식]

    부품 번호:
    KLMDG4UCTA-B041
    제조사:
    Samsung Semiconductor
    상세 설명:
    eMMC 5.1 128 GB 1.8 / 3.3 V HS400 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. LPDDR3, HBM Aquabolt, DDR3, LPDDR4X, SLC Nand, HBM Flarebolt, GDDR6 and MODULE ...
    경쟁 우위:
    We specialize in Samsung Semiconductor KLMDG4UCTA-B041 electronic components. KLMDG4UCTA-B041 can be shipped within 24 hours after order. If you have any demands for KLMDG4UCTA-B041, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    KLMDG4UCTA-B041 제품 속성

    부품 번호 : KLMDG4UCTA-B041
    제조사 : Samsung Semiconductor
    기술 : eMMC 5.1 128 GB 1.8 / 3.3 V HS400 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production
    시리즈 : DDR3
    번역 : eMMC 5.1
    밀도 : 128 GB
    전압 : 1.8 / 3.3 V
    인터페이스 : HS400
    패키지 크기 : 11.5 x 13 x 1.0 mm
    온도. : -25 ~ 85 °C
    제품 상태 : Mass Production

    최근 소식

    Samsung Z-SSD SZ985
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Evolving Mobile Solutions: Samsung at MWC 2018
    Inside the building blocks of the 5G future
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
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