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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. 집
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  5. M393ABG40M52-CYF

Samsung Semiconductor - M393ABG40M52-CYF

KEY Part #: K7359916

[24718PC 주식]

    부품 번호:
    M393ABG40M52-CYF
    제조사:
    Samsung Semiconductor
    상세 설명:
    DDR4 RDIMM 256 GB 8R x 4 2933 Mbps 1.2 V 288 (3DS 4H 16G x 4) x 36 Sample.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. MODULE, LPDDR4X, DDR4, HBM Flarebolt, GDDR6, LPDDR3, LPDDR4 and GDDR5 ...
    경쟁 우위:
    We specialize in Samsung Semiconductor M393ABG40M52-CYF electronic components. M393ABG40M52-CYF can be shipped within 24 hours after order. If you have any demands for M393ABG40M52-CYF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M393ABG40M52-CYF 제품 속성

    부품 번호 : M393ABG40M52-CYF
    제조사 : Samsung Semiconductor
    기술 : DDR4 RDIMM 256 GB 8R x 4 2933 Mbps 1.2 V 288 (3DS 4H 16G x 4) x 36 Sample
    시리즈 : DDR3
    DDR : DDR4
    DIMM 유형 : RDIMM
    밀도 : 256 GB
    순위는 조직을 X. : 8R x 4
    속도 : 2933 Mbps
    전압 : 1.2 V
    핀의 번호 : 288
    구성 요소 구성 : (3DS 4H 16G x 4) x 36
    제품 상태 : Sample

    최근 소식

    The future of NAND technology
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    The Ultra-Low Latency SSD, Z-SSD
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Mission Peak Reference Server System for NGSFF SSD
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
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