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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. 집
  2. 제품
  3. DRAM
  4. MODULE
  5. M386ABG40M51-CAE

Samsung Semiconductor - M386ABG40M51-CAE

KEY Part #: K7359827

[20013PC 주식]

    부품 번호:
    M386ABG40M51-CAE
    제조사:
    Samsung Semiconductor
    상세 설명:
    DDR4 LRDIMM 256 GB 8R x 4 3200 Mbps 1.2 V 288 (4H 3DS 16G x 4) x 36 Sample.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. HBM Aquabolt, GDDR6, LPDDR5, MODULE, LPDDR4X, HBM Flarebolt, LPDDR3 and DDR3 ...
    경쟁 우위:
    We specialize in Samsung Semiconductor M386ABG40M51-CAE electronic components. M386ABG40M51-CAE can be shipped within 24 hours after order. If you have any demands for M386ABG40M51-CAE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M386ABG40M51-CAE 제품 속성

    부품 번호 : M386ABG40M51-CAE
    제조사 : Samsung Semiconductor
    기술 : DDR4 LRDIMM 256 GB 8R x 4 3200 Mbps 1.2 V 288 (4H 3DS 16G x 4) x 36 Sample
    시리즈 : DDR3
    DDR : DDR4
    DIMM 유형 : LRDIMM
    밀도 : 256 GB
    순위는 조직을 X. : 8R x 4
    속도 : 3200 Mbps
    전압 : 1.2 V
    핀의 번호 : 288
    구성 요소 구성 : (4H 3DS 16G x 4) x 36
    제품 상태 : Sample

    최근 소식

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    Automotive Driven by Small Packages Under the Hood
    Mission Peak Reference Server System for NGSFF SSD
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Evolving Mobile Solutions: Samsung at MWC 2018
    Unlocking the Power of Cloud Computing
    Speed for the next generation of mobile devices
    Mass Production of Fifth-Generation V-NAND has Started
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    당신은 또한 관심이있을 수 있습니다
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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