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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. 집
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  5. M386A8K40CM2-CVF

Samsung Semiconductor - M386A8K40CM2-CVF

KEY Part #: K7359817

[14451PC 주식]

    부품 번호:
    M386A8K40CM2-CVF
    제조사:
    Samsung Semiconductor
    상세 설명:
    DDR4 LRDIMM 64 GB 4R x 4 2933 Mbps 1.2 V 288 (DDP4G x 4) x 36 Mass Production.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. LPDDR5, DDR4, SLC Nand, DDR3, HBM Aquabolt, LPDDR3, MODULE and GDDR5 ...
    경쟁 우위:
    We specialize in Samsung Semiconductor M386A8K40CM2-CVF electronic components. M386A8K40CM2-CVF can be shipped within 24 hours after order. If you have any demands for M386A8K40CM2-CVF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M386A8K40CM2-CVF 제품 속성

    부품 번호 : M386A8K40CM2-CVF
    제조사 : Samsung Semiconductor
    기술 : DDR4 LRDIMM 64 GB 4R x 4 2933 Mbps 1.2 V 288 (DDP4G x 4) x 36 Mass Production
    시리즈 : DDR3
    DDR : DDR4
    DIMM 유형 : LRDIMM
    밀도 : 64 GB
    순위는 조직을 X. : 4R x 4
    속도 : 2933 Mbps
    전압 : 1.2 V
    핀의 번호 : 288
    구성 요소 구성 : (DDP4G x 4) x 36
    제품 상태 : Mass Production

    최근 소식

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    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Evolving Mobile Solutions: Samsung at MWC 2018
    Mass Production of Fifth-Generation V-NAND has Started
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Automotive Driven by Small Packages Under the Hood
    Inside the building blocks of the 5G future
    High Bandwidth Memory is Catching on for Data-intensive Computing
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
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      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

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      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

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