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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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Samsung Semiconductor - M378A1K43BB2-CRC

KEY Part #: K7359786

[22422PC 주식]

    부품 번호:
    M378A1K43BB2-CRC
    제조사:
    Samsung Semiconductor
    상세 설명:
    DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. DDR4, DDR3, HBM Flarebolt, GDDR6, LPDDR5, LPDDR4, SLC Nand and LPDDR4X ...
    경쟁 우위:
    We specialize in Samsung Semiconductor M378A1K43BB2-CRC electronic components. M378A1K43BB2-CRC can be shipped within 24 hours after order. If you have any demands for M378A1K43BB2-CRC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M378A1K43BB2-CRC 제품 속성

    부품 번호 : M378A1K43BB2-CRC
    제조사 : Samsung Semiconductor
    기술 : DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced
    시리즈 : DDR3
    DDR : DDR4
    DIMM 유형 : UDIMM
    밀도 : 8 GB
    순위는 조직을 X. : 1R x 8
    속도 : 2400 Mbps
    전압 : 1.2 V
    핀의 번호 : 288
    구성 요소 구성 : (1G x 8) x 8
    제품 상태 : EOL announced

    최근 소식

    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Memory Solutions for Automotive
    Inside the building blocks of the 5G future
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    The future of NAND technology
    당신은 또한 관심이있을 수 있습니다
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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