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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. 집
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  5. M378A1K43BB2-CTD

Samsung Semiconductor - M378A1K43BB2-CTD

KEY Part #: K7359787

[26307PC 주식]

    부품 번호:
    M378A1K43BB2-CTD
    제조사:
    Samsung Semiconductor
    상세 설명:
    DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. GDDR6, SLC Nand, DDR3, HBM Aquabolt, LPDDR4X, GDDR5, MODULE and LPDDR3 ...
    경쟁 우위:
    We specialize in Samsung Semiconductor M378A1K43BB2-CTD electronic components. M378A1K43BB2-CTD can be shipped within 24 hours after order. If you have any demands for M378A1K43BB2-CTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M378A1K43BB2-CTD 제품 속성

    부품 번호 : M378A1K43BB2-CTD
    제조사 : Samsung Semiconductor
    기술 : DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced
    시리즈 : DDR3
    DDR : DDR4
    DIMM 유형 : UDIMM
    밀도 : 8 GB
    순위는 조직을 X. : 1R x 8
    속도 : 2666 Mbps
    전압 : 1.2 V
    핀의 번호 : 288
    구성 요소 구성 : (1G x 8) x 8
    제품 상태 : EOL announced

    최근 소식

    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Autonomous Driving and the Quest for Safety
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Inside the building blocks of the 5G future
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Memory Solutions for Automotive
    당신은 또한 관심이있을 수 있습니다
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    뜨거운 부품