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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  5. M391A1K43BB2-CTD

Samsung Semiconductor - M391A1K43BB2-CTD

KEY Part #: K7359833

[21682PC 주식]

    부품 번호:
    M391A1K43BB2-CTD
    제조사:
    Samsung Semiconductor
    상세 설명:
    DDR4 ECC UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 9 Mass Production.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. HBM Aquabolt, DDR3, LPDDR4, MODULE, HBM Flarebolt, LPDDR5, SLC Nand and LPDDR4X ...
    경쟁 우위:
    We specialize in Samsung Semiconductor M391A1K43BB2-CTD electronic components. M391A1K43BB2-CTD can be shipped within 24 hours after order. If you have any demands for M391A1K43BB2-CTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M391A1K43BB2-CTD 제품 속성

    부품 번호 : M391A1K43BB2-CTD
    제조사 : Samsung Semiconductor
    기술 : DDR4 ECC UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 9 Mass Production
    시리즈 : DDR3
    DDR : DDR4
    DIMM 유형 : ECC UDIMM
    밀도 : 8 GB
    순위는 조직을 X. : 1R x 8
    속도 : 2666 Mbps
    전압 : 1.2 V
    핀의 번호 : 288
    구성 요소 구성 : (1G x 8) x 9
    제품 상태 : Mass Production

    최근 소식

    High Bandwidth Memory is Catching on for Data-intensive Computing
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    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Mission Peak Reference Server System for NGSFF SSD
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    당신은 또한 관심이있을 수 있습니다
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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