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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. 집
  2. 제품
  3. DRAM
  4. LPDDR4X
  5. K4U6E3S4AM-GHCL

Samsung Semiconductor - K4U6E3S4AM-GHCL

KEY Part #: K7359743

[19582PC 주식]

    부품 번호:
    K4U6E3S4AM-GHCL
    제조사:
    Samsung Semiconductor
    상세 설명:
    16 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. LPDDR3, DDR4, LPDDR4, MODULE, GDDR5, HBM Flarebolt, SLC Nand and LPDDR4X ...
    경쟁 우위:
    We specialize in Samsung Semiconductor K4U6E3S4AM-GHCL electronic components. K4U6E3S4AM-GHCL can be shipped within 24 hours after order. If you have any demands for K4U6E3S4AM-GHCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4U6E3S4AM-GHCL 제품 속성

    부품 번호 : K4U6E3S4AM-GHCL
    제조사 : Samsung Semiconductor
    기술 : 16 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production
    시리즈 : DDR3
    밀도 : 16 Gb
    조직. : x32
    속도 : 4266 Mbps
    전압 : 1.8 / 1.1 / 0.6 V
    온도. : -40 ~ 105 °C
    꾸러미 : 200FBGA
    제품 상태 : Mass Production

    최근 소식

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    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Memory Solutions for Automotive
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
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