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해당 지역이 목록에 없으면 다음 중 하나를 선택하십시오.:

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  1. 집
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  5. K3UH7H70AM-JGCL

Samsung Semiconductor - K3UH7H70AM-JGCL

KEY Part #: K7359734

[24643PC 주식]

    부품 번호:
    K3UH7H70AM-JGCL
    제조사:
    Samsung Semiconductor
    상세 설명:
    64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.
    제조업체의 표준 리드 타임:
    재고
    수명:
    일년
    칩 출처:
    홍콩
    RoHS:
    결제 방법:
    배송 방법:
    가족 카테고리:
    KEY Components Co., LTD는 다음을 포함하여 제품 카테고리를 제공하는 전자 부품 유통 업체입니다. LPDDR3, LPDDR5, GDDR6, HBM Aquabolt, MODULE, DDR3, HBM Flarebolt and LPDDR4 ...
    경쟁 우위:
    We specialize in Samsung Semiconductor K3UH7H70AM-JGCL electronic components. K3UH7H70AM-JGCL can be shipped within 24 hours after order. If you have any demands for K3UH7H70AM-JGCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K3UH7H70AM-JGCL 제품 속성

    부품 번호 : K3UH7H70AM-JGCL
    제조사 : Samsung Semiconductor
    기술 : 64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production
    시리즈 : DDR3
    밀도 : 64 Gb
    조직. : x64
    속도 : 4266 Mbps
    전압 : 1.8 / 1.1 / 0.6 V
    온도. : -25 ~ 85 °C
    꾸러미 : 432FBGA
    제품 상태 : Mass Production

    최근 소식

    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Mission Peak Reference Server System for NGSFF SSD
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Autonomous Driving and the Quest for Safety
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Speed for the next generation of mobile devices
    5G and Memory - from Connected Thinking to Connected Living
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    The Ultra-Low Latency SSD, Z-SSD
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      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

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      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

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